THUNDER BAY, ONTARIO--(Marketwire - Oct. 18, 2012) -
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Meaglow Ltd. (Privately Held) announces that Georgia State University (GSU) in the United States has received shipment of its patent pending hollow cathode plasma source for the development of group III-nitride compound semiconductor materials. The installed Meaglow plasma source extends the growth processing parameter space of GSUs presently utilized low-pressure MOCVD reactors, upgrading the tool so that it can produce type III-nitride materials under normal low-pressure growth conditions. The plasma source developed by Meaglow fosters a unique plasma-assisted gas phase and surface chemistry that provides a new path for the integration of dissimilar materials as encountered for ternary and quarternary III-nitride alloys. Research in Dr. Dietz's group at GSU will study the migration enhanced afterglow chemistry and growth dynamics for III-nitride epilayers and nanocomposites, and support Meaglow's effort in commercializing the growth technology. Meaglow has previously applied its hollow cathode plasma source technology via its migration enhanced afterglow technique in the deposition of high indium content InGaN and recently demonstrated a yellow LED in the green gap.
Meaglow is now focused on commercializing its hollow cathode plasma technology, and is fielding inquiries from partners interested in plasma source solutions for MBE or any surface modification to materials. Interested parties should email email@example.com.
About Meaglow Ltd.
Meaglow Ltd. produces a new range of epitaxy equipment (migration enhanced afterglow), MBE & MOCVD accessories, and provides specialized semiconductor thin films to research institutes and industry. Please visit us at www.meaglow.com.
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